5/4/2023 0 Comments Inas solarcell efficiency![]() created photonic crystals with a localized Gaussian ring in reciprocal space and applied this structure to ultrathin GaAs cells with an absorption layer thickness of 260 nm, and the device achieved a total efficiency of 22.35%. introduced photonic topological insulators into the active layer, enhancing light absorption in thin-film solar cells by limiting and capturing sunlight, and thus achieving an improvement in solar cell performance over a wide wavelength range of 400–1100 nm and at an incidence angle of 0–60°. Such a structure is ideal for the filling of quantum dots, which can greatly improve the photoelectric conversion efficiency of the corresponding solar cell. ![]() Our group has designed photonic crystal of a GaAs absorption layer with a thickness of only 0.20 μm. Since the photonic crystals play a very important role in solar cells, it is meaningful to improve the absorption efficiency and photoelectric conversion efficiency of solar cells by utilizing the slow light characteristics of photonic crystals. took the two-dimensional CH 3NH 3PbI 3 perovskite photonic crystal as the absorption layer of solar cells with the scattering elements of an InAs cylinder, enabling a high absorption efficiency of 82.45%. used GaAs square lattices with a thickness of 200 nm as the absorption layer to improve the recovery efficiency of photons and the photoelectric conversion efficiency by up to 30.60%. used ZnO photonic crystals to improve the absorption efficiency of solar cells by reinforcing the optical trap and increasing the optical path length, thus leading to the increased number of optical carriers. ![]() Meanwhile, the honeycomb structure of photonic crystal can effectively avoid the reflection of incident light, so that the solar cell can make better use of the incident light. The thickness of photonic crystal is only a few microns, which greatly reduces the cost. In this work, the effect of photonic crystal on the efficiency of the absorption layer was studied. This work provides theoretical guidance for the rational design of solar cells based on photonic crystal structures. At the same time, the efficiency of such an absorption layer is still above 90% when the angle ranges from 0 to 70°. In addition, the quantum efficiency is maintained above 98% and the total efficiency is 91.59%. The absorption efficiency of the GaAs absorption layer with KNbO 3 as the scattering element is increased by 28.42% compared with that of a GaAs absorption layer with empty holes. The results show that the absorption layer delivers the optimal performance when using a hexagonal KNbO 3 scattering element. Based on the simulation of the shape, width, and period of the scattering element, the effect of the thickness of the scattering element on the absorption efficiency, quantum efficiency, and total efficiency of absorption efficiency was comprehensively simulated. In addition, the ferroelectric and photovoltaic characteristics of KNbO 3 enable the realization of decreased thickness of solar cells. Benefited by the high absorption efficiency of KNbO 3, the utilization of the ultraviolet and infrared bands for solar cells can be strengthened. In this work, gallium arsenide (GaAs), which has an adjustable band gap and low cost, was adopted as an absorption layer in which KNbO 3, having good dielectric, photoelectric, and piezoelectric properties, served as a scattering element for the improvement in absorption efficiency of solar cells.
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